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| ADVANCED INFORMATION ADVANCED INFORMATION MMBT4403 SMALL SIGNAL TRANSISTORS (PNP) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 .056 (1.43) .052 (1.33) FEATURES PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Top View As complementary type, the NPN transistor MMBT4401 is recommended. This transistor is also available in the TO-92 case with the type designation 2N4403. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking code: 2T .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation FR-5 Board,* TA=25C Derate above 25C Power Dissipation Alumina Substrate,** TA=25C Derate above 25C Thermal Resistance, Junction to Ambient FR-5 Board Alumina Substrate VCBO VCEO VEBO IC Ptot 40 40 5.0 600 225 1.8 300 2.4 556 417 150 55 to +150 Volts Volts Volts mA mW mW/C mW mW/C C/W C C Ptot RQJA Tj TS Junction Temperature Storage Temperature Range *FR-5 = 1.0 x 0.75 x 0.062 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2/17/99 MMBT4403 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 0.1 mA, IE = 0 Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 0.1 mA, IC = 0 Collector-Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base-Emitter Saturation Voltage(1) at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Collector-Emitter Cutoff Current at VEB = 0.4 V, VCE = 35 V Emitter-Base Cutoff Current at VEB = 0.4 V, VCE = 35 V DC Current Gain at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 2 V, IC = at VCE = 2 V, IC = 0.1 mA 1 mA 10 mA 150 mA 500 mA (1) (1) V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat ICEX IBEV hFE hFE hFE hFE hFE hie fT CCBO CEBO 40 40 5.0 0.75 30 60 100 100 20 1.5 200 0.40 0.75 0.95 1.30 100 100 300 15 8.5 30 Volts Volts Volts Volts Volts Volts Volts nA nA kW MHz pF pF Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz Current Gain-Bandwidth Product at VCE = 10 V, IC = 20 mA, f = 100 MHz Collector-Base Capacitance at VCB = 10 V, IE = 0, f = 1 MHz Emitter-Base Capacitance at VEB = 0.5 V, IC = 0, f = 1 MHz, NOTES: (1) Pulse test: pulse width 300m duty cycle 2% MMBT4403 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHz Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz Delay Time at IB1 = 15 mA, IC = 150 mA, VCC = 30 V, VEB = 2 V Rise Time at IB1 = 15 mA, IC = 150 mA, VCC = 30 V, VEB = 2 V Storage Time at IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30 V Fall Time at IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30 V hre hfe hoe td tr ts tf 0.1 a 104 60 1.0 8 a 104 500 100 15 20 225 30 mS ns ns ns ns SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 1 - TURN-ON TIME +30V 200W +16 V 0 -2 V < 2 ns 1kW C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope +16 V 0 -14 V < 20 ns -4 V 1kW C S* < 10 pF FIGURE 2 - TURN-OFF TIME +30V 200W 1.0 to 100 ms, DUTY CYCLE A 2% 1.0 to 100 ms, DUTY CYCLE A 2% |
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